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MFG:PHL
Part Number: BLW34
MFG: PHL
Description: N-P-N silicon planar epitaxial transistor primarily intended for use in linear u.h.f. amplifiers for television transmi...
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BLW34
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DataSheet
General Description
BLW34 General Description
N-P-N silicon planar epitaxial transistor primarily intended for use in linear u.h.f. amplifiers for television transmitters and transposers. The excellent d.c. dissipation properties for class-A operation are obtained by means of diffused emitter ballasting resistors and a multi-base structure, providing an optimum temperature profile on the crystal area. The combination of optimum thermal design and the application of gold sandwich metallization
realizes excellent reliability properties.
The transistor has a1/4" capstan envelope with ceramic cap.
BLW34 Maximum Ratings
| Collector-base voltage (open emitter)(peak value); VBE =0 open base |
VCBSM | max. | 50 | ||
| Collector-emitter voltage (open base) | Vceo | max. | 30v | ||
| Emitter-base voltage (open collector) | Vebo | max. | 4v | ||
| Collector current | |||||
| d.c. or average | IC | max. | 2.25 A | ||
| (peak value); f > 1 MHz | ICM | max. | 3.5 A | ||
| Total power dissipation | |||||
|
at Tmb = 94 °C; f > 1 MHz |
Ptot (r.f.) | max. | 31 W | ||
| Storage temperature | Tstg | -65 to , 150 °C | |||
| Operating junction temperature | Tj | max. | 200 °C | ||
BLW34 Connection Diagram
BLW34
PDF/DataSheet Download
- Datasheet: BLW34
- File Size: 82657 KB
- Manufacturer: PHILIPS [Philips Semiconductors]
- Click here to Download
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BLW34 Relative Products
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