BLW83

Pinout




Specifications

Collector-base voltage (open emitter)peak value	VCESM	max.	65v
Collector-emitter voltage (open base)	Vceo	max.	36v
Emitter-base voltage (open collector)	Vebo	max.	4v
Collector current (average)	IC(AV)	max.	3 A
Collector current (peak value); f > 1 MHz	ICM	max.	9A
D.C. and r.f. (f > 1 MHz) power
dissipation; Tmb = 25 °C	Ptot ,Prf	max.	76 W
Storage temperature	Tstg	-65 to , 150 °C
Operating junction temperature	Tj	max.	200 °C

Description

N-P-N silicon planar epitaxial transistor BLW83 for use in transmitting amplifiers operating in the h.f. and v.h.f. bands, with a nominal supply voltage of 28 V. The transistor is specified for s.s.b. applications as linear amplifier in class-A and AB. The BLW83 is resistance stabilized and is guaranteed to withstand severe load mismatch conditions. Matched hFE groups are available on request.

BLW83 has a 3/8" flange envelope with a ceramic cap. All leads are isolated from the flange.