BLW85

Configuration :
Emitter- Base Voltage VEBO : 4 V
Packaging : Tray
Maximum Operating Frequency : 175 MHz
Package / Case : SOT-123
Collector- Emitter Voltage VCEO Max : 16 V
Continuous Collector Current : 9 A
Maximum DC Collector Current : 22 A
Power Dissipation : 105 W


Pinout




Specifications

Collector-base voltage (open emitter)peak value	VCESM	max.	36v
Collector-emitter voltage (open base)	Vceo	max.	16v
Emitter-base voltage (open collector)	Vebo	max.	4v
Collector current (average)	IC(AV)	max.	9 A
Collector current (peak value); f > 1 MHz	ICM	max.	22 A
D.C. and r.f. (f > 1 MHz) power
dissipation; Tmb = 25 °C	Ptot ,Prf	max.	105 W
Storage temperature	Tstg	-65 to , 150 °C
Operating junction temperature	Tj	max.	200 °C

Description

N-P-N silicon planar epitaxial transistor BLW85 intended for use in class-A, B and C operated mobile h.f. and v.h.f. transmitters with a nominal supply voltage of 12,5 V. The transistor BLW85 is resistance stabilized and is guaranteed to withstand severe load mismatch conditions with a supply over-voltage to 16,5 V.
Matched hFE groups are available on request.

BLW85 has a 3/8" flange envelope with a ceramic cap. All leads are isolated from the flange.