BLW86

Configuration :
Collector- Emitter Voltage VCEO Max : 35 V
Emitter- Base Voltage VEBO : 4 V
Packaging : Tray
Maximum Operating Frequency : 175 MHz
Package / Case : SOT-123
Continuous Collector Current : 5 A
Maximum DC Collector Current : 12 A
Power Dissipation : 60 W


Pinout




Specifications

Collector-base voltage (open emitter)peak value	VCESM	max.	65v
Collector-emitter voltage (open base)	Vceo	max.	36v
Emitter-base voltage (open collector)	Vebo	max.	4v
Collector current (average)	IC(AV)	max.	4 A
Collector current (peak value); f > 1 MHz	ICM	max.	12 A
D.C. and r.f. (f > 1 MHz) power
dissipation; Tmb = 25 °C	Ptot ,Prf	max.	105 W
Storage temperature	Tstg	-65 to , 150 °C
Operating junction temperature	Tj	max.	200 °C

Description

N-P-N silicon planar epitaxial transistor BLW86 intended for use in class-A, AB and B operated h.f. and v.h.f.  transmitters with a nominal supply voltage of 28 V. The BLW86 is resistance stabilized and is guaranteed to withstand severe load mismatch conditions. Matched hFE groups are available on request.

BLW86 has a 3/8" flange envelope with a ceramic cap. All leads are isolated from the flange.