BPW16N

Maximum Power Dissipation : 100 mW
Maximum Dark Current : 200 nA
Package / Case : T-3/4


Features:

Miniature T flat clear plastic package
Very wide viewing angle = ± 40 ^o
Suitable for 0.1" (2.54 mm) center to center spacing
Suitable for visible and near infrared radiation
Compatible with IR diode CQY36N




Application

Detector in electronic control and drive circuits




Specifications

Parameter	Test Conditions	Symbol	Value	Unit
Collector Base Voltage		VCBO	32	V
Emitter Collector Voltage		VECO	5	V
Collector Current		IC	50	mA
Peak Collector Current	tp/T = 0.5, tp 10 ms	ICM	100	mA
Total Power Dissipation	Tamb 25	Ptot	100	mW
Junction Temperature		Tj	100
Storage Temperature Range		Tstg	-55...+150
Soldering Temperature	t 3 s	Tsd	260
Thermal Resistance Junction/Ambient		RthJA	450	K/W

Description

BPW16N is a silicon NPN epitaxial planar phototransistor in a miniature plastic case with flat window.With a lead center to center spacing of 2.54mm and a package width of 2.4mm the devices are easily stackable on PC boards and assembled to arrays of unlimited size.


Due to BPW16N waterclear epoxy the device is sensitive to visible and near infrared radiation.

The BPW16N is Silicon NPN Phototransistor, RoHS Compliant