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BPW17N

Photodetector Transistors NPN Phototransistor 32V 100mW 825nm

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SeekIC No. : 0081994 Detail

BPW17N: Photodetector Transistors NPN Phototransistor 32V 100mW 825nm

BPW17N Data Sheet

floor Price/Ceiling Price

US $ .26~.44 / Piece | Get Latest Price
Part Number:
BPW17N
Mfg:
Vishay Semiconductors
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~250
  • Unit Price
  • $.44
  • $.39
  • $.3
  • $.26
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/4/18

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Product Details

Quick Details

Maximum Power Dissipation : 100 mW Maximum Dark Current : 200 nA
Package / Case : T-3/4    

Description

Maximum Power Dissipation : 100 mW
Maximum Dark Current : 200 nA
Package / Case : T-3/4


Features:

Miniature T3/4 clear plastic package with lens
Narrow viewing angle = ± 12o
Insensitive against background light due to narrow aperture Suitable for 0.1" (2.54 mm) center to center spacing
Suitable for visible and near infrared radiation
Compatible with IR diode CQY37N




Application

Detector in electronic control and drive circuits




Specifications

Parameter Test Conditions Symbol Value Unit
Collector Base Voltage VCBO 32 V
Collector Emitter Voltage VCEO 5 V
Collector Current IC 50 mA
Peak Collector Current tp/T = 0.5, tp 10 ms ICM 100 mA
Total Power Dissipation Tamb 25 Ptot 100 mW
Junction Temperature Tj 100
Storage Temperature Range Tstg 55...+100
Soldering Temperature t 3 s Tsd 260
Thermal Resistance Junction/Ambient RthJA 450 K/W





Description

The BPW17N is Silicon NPN Phototransistor, RoHS Compliant




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