BPW36

Maximum Dark Current : 100 nA
Package / Case : TO-18
Maximum Power Dissipation : 600 mW


Features:

* Hermetically sealed package
* Narrow reception angle
* European "Pro Electron" registered


Specifications

Parameter	Symbol	Rating	Unit
Operating Temperature	TOPR	-65 to +125	°C
Storage Temperature	TSTG	-65 to +150	°C
Soldering Temperature (Iron)(3,4,5 and 6)	TSOL-I	240 for 5 sec	°C
Soldering Temperature (Flow)(3,4 and 6)	TSOL-F	260 for 10 sec	°C
Collector-Emitter Voltage	VCEO	25	V
Collector-Base Voltage	VCBO	25	V
Emitter-Base Voltage	VEBO	12	V
Power Dissipation(TA = 25°C)(1)	PD	300	mW
Power Dissipation(TC = 25°C)(2)	PD	600	mW

Description

* The BPW36/37 are silicon phototransistors mounted in narrow angle TO-18 packages.
1. Derate power dissipation linearly 3.00 mW/°C above 25°C ambient.
2. Derate power dissipation linearly 6.00 mW/°C above 25°C case.
3. RMA flux is recommended.
4. Methanol or isopropyl alcohols are recommended as cleaning agents.
5. Soldering iron tip 1/16" (1.6mm) minimum from housing.
6. As long as leads are not under any stress or spring tension.
7. Light source is a GaAs LED emitting light at a peak wavelength of 940 nm.


Parameters:

Technical/Catalog Information	BPW36
Vendor	Fairchild Optoelectronics Group
Category	Sensors, Transducers
Voltage - Collector Emitter Breakdown (Max)	45V
Current - Collector (Ic) (Max)	-
Current - Dark (Id) (Max)	100nA
Power - Max	300mW
Orientation	Top View
Mounting Type	Through Hole
Package / Case	TO-18
Wavelength	880nm
Viewing Angle	20°
Other Names	BPW36 BPW36