BPW85

Maximum Dark Current :
Maximum Power Dissipation : 100 mW
Package / Case : T-1


Features:

Fast response times High photo sensitivity
Standard T1 (§ 3 mm ) clear plastic package
Axial terminals
Angle of half sensitivity = ± 25^o
Suitable for visible and near infrared radiation
Selected into sensitivity groups


Specifications

Parameter	Test Conditions	Symbol	Value	Unit
Collector Emitter Voltage		VCEO	70	V
Emitter Collector Voltage		VECO	5	V
Collector Current		IC	50	mA
Peak Collector Current	tp/T = 0.5, tp 10 ms	ICM	100	mA
Total Power Dissipation	Tamb 25	Ptot	100	mW
Junction Temperature		Tj	100
Storage Temperature Range		Tstg	55...+100
Soldering Temperature	t 5 s	Tsd	260
Thermal Resistance Junction/Ambient		RthJA	450	K/W

Description

BPW85 is a high speed and high sensitive  silicon NPN epitaxial planar phototransistor in a standard T1 (3mm) plastic package. Due to its waterclear epoxy the device is sensitive to visible and near infrared radiation.


The viewing of BPW85 angle of ± 25^o makes it insensible to ambient straylight.