MOSFET P-Chnl 45V
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| Transistor Polarity : | P-Channel | Drain-Source Breakdown Voltage : | 45 V | ||
| Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 0.23 A | ||
| Resistance Drain-Source RDS (on) : | 14000 mOhms | Configuration : | Single | ||
| Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
| Package / Case : | E-Line | Packaging : | Bulk |
| PARAMETER | Symbol | Value | Unit |
| Drain-Source Voltage | VDS | -45 | V |
| Continuous Drain Current at Tamb=25°C | ID | -230 | mA |
| Pulsed Drain Current | IDM | -3 | A |
| Gate Source Voltage | VGS | ± 20 | V |
| Power Dissipation at Tamb=25°C | Ptot | 700 | mW |
| Operating and Storage Temperature Range | Tj, TSTG | -55 to +150 |
| Part Number | BS250P |
| Config/ Polarity |
P |
| PD (W) |
0.7 |
| VDSS (V) |
-45 |
| VGSS (+/-) (V) |
20 |
| ID (A) |
-0.23 |
| RDS(on) Max() @ VGS; -2.5V | - |
| RDS(on) Max() @ VGS; 4.0V | - |
| RDS(on) Max() @ VGS; -4.5V | - |
| RDS(on) Max() @ VGS; -5V | - |
| RDS(on) Max() @ VGS; -10V | 14 |
| VGS(th) (V) |
-3.5 |
| Ciss (typ) (pF) |
60 |
| Qg (typ) (nC) @ VGS; 10V |
- |