BS616LV1012

Features:

• Wide Vcc operation voltage : 2.4 ~ 3.6V
• Very low power consumption :
       V_cc = 3.0V     C-grade : 22mA (@55ns) operating current
                             I- grade : 23mA (@55ns) operating current
                             C-grade : 17mA (@70ns) operating current
                             I- grade : 18mA (@70ns) operating current
                             0.4uA (Typ.) CMOS standby current
• High speed access time :
      -55          55ns 
      -70          70ns
• Automatic power down when chip is deselected
• Three state outputs and TTL compatible
• Fully static operation
• Data retention supply voltage as low as 1.5V
• Easy expansion with CEand OE options
• I/O Configuration x8/x16 selectable by LB and UB pin


Pinout




Specifications

SYMBOL	PARAMETER	RATING	UNITS
V TERM	Terminal Voltage with Respect to GND	-0.5 to Vcc+0.5	V
Vcc	Power Supply Voltage	-0.5 to Vcc+0.5	V
T BIAS	Temperature Under Bias	-40 to +85
T STG	Storage Temperature	-60 to +150
P T	Power Dissipation	1.0	W
I OUT	DC Output Current	20	mA

Description

The BS616LV1012 is a high performance, very low  power CMOS Static   Random Access Memory organized  as  65,536  words  by  16  bits  and operates from a wide range of 2.4V to 3.6V supply voltage.

Advanced  CMOS  technology  and  circuit  techniques of BS616LV1012 provide both high speed and  low  power features  with  a  typical  CMOS  standby  current of 0.4uA at 3V/25oC and maximum access time of  55ns at 3V/85oC.

Easy    memory    expansion   is  provided   by  an  active  LOW   chip  enable( CE) and  active LOW  output enable( OE)  and  three-state output drivers.

The BS616LV1012 has an  automatic power down feature, reducing  the power  consumption significantly when chip is deselected.

The BS616LV1012  is  available  in  the  JEDEC  standard  44-pin  TSOP Type II and 48-pin BGA package.