BS616UV1610

1. Stresses greater than those listed under  ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and  functional  operation of the device at these or any other  conditions above  those  indicated in the operational  sections of this  specification is not impl maximum rating conditions for extended periods may affect reliability.

The BS616UV1610 is a high performance, ultra low power CMOS Static   Random Access Memory organized as 1,048,576 words  by 16 bits and operates from a wide  range of 1.8V to 2.3V supply voltage.

Advanced  CMOS  technology  and  circuit  techniques of BS616UV1610 provide both high speed and  low power features  with a  typical  CMOS  standby  current of 1.2uA and  maximum access time of 70/100ns in 2V operation.

Easy memory expansion of BS616UV1610 is provided by an active LOW  chip enable(CE 1), active HIGH chip enable (CE2), active LOW output enable(OE ) and  three-state output drivers.

The BS616UV1610 has an  automatic  power down feature, reducing the power  consumption significantly when chip is deselected. The   BS616UV1610  is  available  in 48-pin BGA  package.