BS616UV1620

1. Stresses greater than those listed under  ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and  functional  operation of the device at these or any other  conditions above  those  indicated in the operational  sections of this  specification is not im maximum   rating   conditions  for   extended  periods  may affect
reliability.

The BS616UV1620 is a high performance, ultra low power CMOS Static   Random Access Memory organized as 1,048,676  words by 16 bits  or 2,097,152 bytes by 8 bits selectable by CIO pin and  operates ina wide range of 1.8V to 2.3V supply voltage.

Advanced  CMOS  technology  and  circuit  techniques of BS616UV1620 provide both high speed and  low power features  with a  typical  CMOS  standby  current of 1.2uA and  maximum access time of 70/100ns in 2.0V operation.

This device provide three control inputs and three states outputdrivers for easy memory expansion.

The BS616UV1620 has an  automatic  power down feature, reducing the  power  consumption significantly when chip is deselected. The   BS616UV1620  is  available  in  DICE form and 48-pin BGA type.