BS62UV1027

Features:

* Wide Vcc operation voltage :
                     C-grade : 1.8V ~ 3.6V
                     I-grade : 1.9V ~ 3.6V
                     (Vcc_min.=1.65V at 25 C)
* Ultra low power consumption :
                               Vcc = 2.0V  C-grade : 7mA (Max.) operating current
                               I -grade : 8mA (Max.) operating current
                               0.05uA (Typ.) CMOS standby current
       Vcc = 3.0V     C-grade : 13mA (Max.) operating current
                               I- grade : 15mA (Max.) operating current
                               0.10uA (Typ.) CMOS standby current
* High speed access time :
   -85          85ns (Max.)
   -10        100ns (Max.)
* Automatic power down when chip is deselected
* Three state outputs and TTL compatible
* Fully static operation


Pinout




Specifications

SYMBOL	PARAMETER	RATING	UNITS
VTERM	Terminal Voltage with Respect to GND	-0.5 toVcc+0.5	V
TBIAS	Temperature Under Bias	-40 to +85	O C
TSTG	Storage Temperature	-60 to +150	O C
PT	Power Dissipation	1.0	W
IOUT	DC Output Current	20	mA

Description

The  BS62UV1027  is  a  high  performance, ultra   low  power   CMOS  Static Random Access Memory organized as 131,072 words  by  8 bits and operates from a wide range of 1.8V to 3.6V supply voltage. Advanced  CMOS  technology and circuit techniques provide both high speed and low power features with a typical  CMOS standby current of  0.05uA at 2.0V/25 C and maximum access time of 85ns at 85 C. Easy  memory  expansion   is   provided   by  an  active   LOW  chip  enable (CE1),   an  active  HIGH  chip  enable (CE2),  and  active LOW output   enable (OE)  and  three-state output drivers.  The BS62UV1027 has an automatic  power down feature, reducing the power consumption significantly when chip is deselected. The  BS62UV1027 is available in DICE form, JEDEC standard 32 pin 450mil Plastic SOP, 300mil Plastic SOJ, 600mil Plastic DIP, 8mmx13.4 mm STSOP and 8mmx20mm TSOP.