Purchase BS850, In-stock BS850 From SeekIC.
MFG:3000 Package Cooled:SOT-23 D/C:06+
- Table of contents:
BS850
-
Suppliers
DataSheet
General Description
BS850 Maximum Ratings
| Symbol | Value | Unit | |
| Drain-Source Voltage | VDSS | 60 | V |
| Drain-Gate Voltage | VDGS | 60 | V |
| Gate-Source Voltage (pulsed) | VGS | ± 20 | V |
| Drain Current (continuous) | ID | 250 | mA |
| Power Dissipation at TSB = 50 °C | Ptot | 0.3101) | W |
| Junction Temperature | Tj | 150 | °C |
| Storage Temperature Range | TS | 65 to +150 | °C |
| 1) Device on fiberglass substrate, see layout | |||
BS850 Features
· High input impedance
· High-speed switching
· No minority carrier storage time
· CMOS logic compatible input
· No thermal runaway
· No secondary breakdown
· High-speed switching
· No minority carrier storage time
· CMOS logic compatible input
· No thermal runaway
· No secondary breakdown
BS850
PDF/DataSheet Download
- Datasheet: BS850
- File Size: 254011 KB
- Manufacturer: GE [General Semiconductor]
- Click here to Download
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