Features: · High input impedance· High-speed switching· No minority carrier storage time· CMOS logic compatible input· No thermal runaway· No secondary breakdownSpecifications Symbol Value Unit Drain-Source Voltage VDSS 60 V Drain-Gate Voltage VDGS 60 V Gate-Source Voltage ...
BS870: Features: · High input impedance· High-speed switching· No minority carrier storage time· CMOS logic compatible input· No thermal runaway· No secondary breakdownSpecifications Symbol Value ...
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| Symbol | Value | Unit | |
| Drain-Source Voltage | VDSS | 60 | V |
| Drain-Gate Voltage | VDGS | 60 | V |
| Gate-Source Voltage (pulsed) | VGS | ±20 | V |
| Drain Current (continuous) at TSB = 50 °C | ID | 250 | mA |
| Power Dissipation at TSB = 50 °C | Ptot | 0.3101) | mW |
| Junction Temperature | Tj | 150 | |
| Storage Temperature Range | TSTG | 65 to +150 | |
| 1) Device on fiberglass substrate, see layout | |||
| Part Number | BS870 |
| Config/ Polarity |
N |
| PD (W) |
0.3 |
| VDSS (V) |
60 |
| VGSS (+/-) (V) |
20 |
| ID (A) |
0.25 |
| RDS(on) Max () @ VGS; 1.8V | |
| RDS(on) Max () @ VGS; 2.5V | |
| RDS(on) Max () @ VGS; 4.0V | |
| RDS(on) Max () @ VGS; 4.5V | |
| RDS(on) Max () @ VGS; 5V | |
| RDS(on) Max () @ VGS; 10.0V | 5 |
| VGS(th) (V) |
3 |
| Ciss (typ) (pF) |
22 |
| Qg (typ) (nC) @ VGS; 4.5V |
|
| Qg (typ) (nC) @ VGS; 5V |
|
| Qg (typ) (nC) @ VGS; 10V |