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BS870-7

MOSFET 60V 310mW

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BS870-7: MOSFET 60V 310mW

BS870-7 Data Sheet

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Part Number:
BS870-7
Mfg:
Diodes Inc.
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 60 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 250 mA
Resistance Drain-Source RDS (on) : 3.5 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOT-23 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Package / Case : SOT-23
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 60 V
Resistance Drain-Source RDS (on) : 3.5 Ohms
Continuous Drain Current : 250 mA


Parameters:

Technical/Catalog InformationBS870-7
VendorDiodes Inc
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25° C250mA
Rds On (Max) @ Id, Vgs5 Ohm @ 200mA, 10V
Input Capacitance (Ciss) @ Vds 50pF @ 10V
Power - Max300mW
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs-
Package / CaseSOT-23-3, TO-236-3, Micro3?, SSD3, SST3
FET FeatureStandard
Drawing Number*
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names BS870 7
BS8707
BS870DITR ND
BS870DITRND
BS870DITR



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