BSA223SP

Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Drain to Source Voltage (Vdss): 20V
Power - Max: 250mW
FET Type: MOSFET P-Channel, Metal Oxide
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Manufacturer: Infineon Technologies
Series: OptiMOS™
Current - Continuous Drain (Id) @ 25° C: 390mA
Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 390mA, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 1.5µA
Gate Charge (Qg) @ Vgs: 0.62nC @ 4.5V
Input Capacitance (Ciss) @ Vds: 56pF @ 15V
Supplier Device Package: PG-SC-75


Features:

· P-Channel
· Enhancement mode
· Super Logic Level (2.5 V rated)
· 150°C operating temperature
· Avalanche rated
· dv/dt rated


Specifications

Parameter	Symbol	Value	Unit
Continuous drain current TA=25°C TA=70°C	ID	-0.39 -0.31	A
Pulsed drain current TA=25°C	ID puls	-1.56
Avalanche energy, single pulse ID=-0.39 A , VDD=-10V, RGS=25W	EAS	1.4	mJ
Reverse diode dv/dt IS=-0.39A, VDS=-16V, di/dt=200A/µs, Tjmax=150°C	dv/dt	-6	kV/µs
Gate source voltage	VGS	±12	V
Power dissipation TA=25°C	Ptot	0.25	W
Operating and storage temperature	Tj , Tstg	-55... +150	°C
IEC climatic category; DIN IEC 68-1		55/150/56

Parameters:

Technical/Catalog Information	BSA223SP
Vendor	Infineon Technologies
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	390mA
Rds On (Max) @ Id, Vgs	1.2 Ohm @ 390mA, 4.5V
Input Capacitance (Ciss) @ Vds	56pF @ 15V
Power - Max	250mW
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	0.62nC @ 4.5V
Package / Case	SC-75
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	BSA223SP BSA223SP BSA223SPINTR ND BSA223SPINTRND BSA223SPINTR