BSH111,215

MOSFET N-CH TRNCH 55V 335MA

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SeekIC No. : 00147184 Detail

BSH111,215: MOSFET N-CH TRNCH 55V 335MA

floor Price/Ceiling Price

US $ .03~.04 / Piece | Get Latest Price
Part Number:
BSH111,215
Mfg:
NXP Semiconductors
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $.04
  • $.04
  • $.04
  • $.03
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/5/19

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 55 V
Gate-Source Breakdown Voltage : +/- 10 V Continuous Drain Current : 335 mA
Resistance Drain-Source RDS (on) : 2.4 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOT-23 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Package / Case : SOT-23
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 55 V
Gate-Source Breakdown Voltage : +/- 10 V
Resistance Drain-Source RDS (on) : 2.4 Ohms
Continuous Drain Current : 335 mA


Parameters:

Technical/Catalog InformationBSH111,215
VendorNXP Semiconductors (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25° C335mA
Rds On (Max) @ Id, Vgs4 Ohm @ 500mA, 4.5V
Input Capacitance (Ciss) @ Vds 40pF @ 10V
Power - Max830mW
PackagingDigi-Reel?
Gate Charge (Qg) @ Vgs1nC @ 8V
Package / CaseSST3 (SOT-23-3)
FET FeatureLogic Level Gate
Drawing Number568; SOT23; ; 3
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names BSH111,215
BSH111,215
568 1657 6 ND
56816576ND
568-1657-6



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