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BSH112

Features: · TrenchMOS™ technology· Very fast switching· Logic level compatible· Subminiature surface mount package·Gate-source ESD protection diodesApplication· Relay driver·High speed line driver· Logic level translatorPinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. ...

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SeekIC No. : 004302141 Detail

BSH112: Features: · TrenchMOS™ technology· Very fast switching· Logic level compatible· Subminiature surface mount package·Gate-source ESD protection diodesApplication· Relay driver·High speed line dr...

BSH112 Data Sheet

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Part Number:
BSH112
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

· TrenchMOS™ technology
· Very fast switching
· Logic level compatible
· Subminiature surface mount package
·Gate-source ESD protection diodes


Application

· Relay driver
·High speed line driver
· Logic level translator


Pinout

Connection Diagram


Specifications

SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VDS
drain-source voltage (DC)
 Tj = 25 to 150 °C
60
V

 VDGR

 drain-gate voltage (DC)

 Tj = 25 to 150 °C; RGS = 20 k

 

 60

 V

VGS
gate-source voltage (DC)
±15
V
ID
drain current (DC)
 Tsp = 25 °C; VGS = 10 V;
Figure 2 and 3

300

mA

 Tsp = 100 °C; VGS = 10 V; Figure 2  190  mA
IDM
peak drain current
Tsp = 25 °C; pulsed; tp 10   s;Figure 3
1.2
mA
Ptot
total power dissipation
Tsp = 25 °C; Figure 1
0.83
W
 
 
 
Tstg
storage temperature
-65
+150
°C
Tj
operating junction temperature
-65
+150
°C
.


Description

N-channel enhancement mode field-effect transistor BSH112 in a plastic package using TrenchMOS™1 technology.

Product availability: BSH112 in SOT23.




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