BSH114 Selling Leads, Price trend, BSH114 DataSheet download, circuit diagram from SeekIC.com

Features: · TrenchMOS™ technology· Low on-state resistance· Very fast switching·Surface mount package.Application· Relay driver· DC to DC converter·General purpose switch.PinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage (D...

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SeekIC No. : 004302142 Detail

BSH114: Features: · TrenchMOS™ technology· Low on-state resistance· Very fast switching·Surface mount package.Application· Relay driver· DC to DC converter·General purpose switch.PinoutSpecifications ...

BSH114 Data Sheet

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Part Number:: BSH114
Supply Ability:: 5000

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1~5000

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Negotiable

Processing time
15 Days

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Product Details

Description

Features:

· TrenchMOS™ technology
· Low on-state resistance
· Very fast switching
·Surface mount package.

Application

· Relay driver
· DC to DC converter
·General purpose switch.

Pinout

Connection Diagram

Specifications

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
V_DS	drain-source voltage (DC)	T_j= 25 to 150 °C		100	V
V_DGR	drain-gate voltage (DC)	T_j= 25 to 150 °C; R_GS = 20 k		100	V
V_GS	gate-source voltage (DC)			±20	V
I_D	drain current (DC)	T_sp= 25 °C; V_GS = 10 V; Figure 2 and 3		0.85	mA
		T_sp= 100 °C; V_GS= 10V; Figure 2		0.5	mA
		T_amb= 25 °C; V_GS = 10 V		0.5
		T_amb = 100 °C; V_GS = 10 V		0.3
I_DM	peak drain current	T_sp = 25 °C; pulsed; tp 10 s;Figure 3		3.4	mA
P_tot	total power dissipation	T_sp= 25 °C; Figure 1		0.83	W
		T_sp= 25 °C; Figure 1		0.36	W
		T_amb= 25 °C		0.36
T_stg	storage temperature		-55	+150	°C
T_j	operating junction temperature		-55	+150	°C

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Description

N-channel enhancement mode field-effect transistor BSH114 in a plastic package using TrenchMOS™¹ technology.

Product availability: BSH114 in SOT23.

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BSH114

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