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BSH114

Features: · TrenchMOS™ technology· Low on-state resistance· Very fast switching·Surface mount package.Application· Relay driver· DC to DC converter·General purpose switch.PinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage (D...

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BSH114: Features: · TrenchMOS™ technology· Low on-state resistance· Very fast switching·Surface mount package.Application· Relay driver· DC to DC converter·General purpose switch.PinoutSpecifications ...

BSH114 Data Sheet

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Part Number:
BSH114
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

· TrenchMOS™ technology
· Low on-state resistance
· Very fast switching
·Surface mount package.


Application

· Relay driver
· DC to DC converter
·General purpose switch.


Pinout

Connection Diagram


Specifications

SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VDS
drain-source voltage (DC)
 Tj = 25 to 150 °C
100
V

VDGR

drain-gate voltage (DC)

Tj = 25 to 150 °C; RGS = 20 k

100

V

VGS
gate-source voltage (DC)
±20
V
ID
drain current (DC)
 Tsp = 25 °C; VGS = 10 V;
Figure 2 and 3

0.85

mA

Tsp = 100 °C; VGS = 10V; Figure 2

0.5

 mA
 Tamb = 25 °C; VGS = 10 V  0.5
 Tamb = 100 °C; VGS = 10 V  0.3
IDM
peak drain current
Tsp = 25 °C; pulsed; tp 10 s;Figure 3
3.4
mA
Ptot
total power dissipation
Tsp = 25 °C; Figure 1
0.83
W
0.36
W
Tamb = 25 °C
  
Tstg
storage temperature
-55
+150
°C
Tj
operating junction temperature
-55
+150
°C
.


Description

N-channel enhancement mode field-effect transistor BSH114 in a plastic package using TrenchMOS™1 technology.

Product availability: BSH114 in SOT23.


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