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BSH299

Features: · Low threshold voltage· High-speed switching· No secondary breakdown· Direct interface to C-MOS, TTL, etc.Application· Power management· Battery powered applications e.g. cellular phones· General purpose switch.PinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX...

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SeekIC No. : 004302150 Detail

BSH299: Features: · Low threshold voltage· High-speed switching· No secondary breakdown· Direct interface to C-MOS, TTL, etc.Application· Power management· Battery powered applications e.g. cellular phones·...

BSH299 Data Sheet

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Part Number:
BSH299
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

· Low threshold voltage
· High-speed switching
· No secondary breakdown
· Direct interface to C-MOS, TTL, etc.


Application

· Power management
· Battery powered applications e.g. cellular phones
· General purpose switch.


Pinout

Connection Diagram


Specifications

SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VDS
drain-source voltage (DC)
-50
V
VGSO
gate-source voltage (DC)
open drain
±20
V
ID
drain current (DC)
Ts = 80 °C; note 1
-0.2
A
IDM
peak drain current
note 2
-0.8
A
Ptot
total power dissipation
Ts = 80 °C; see Fig.2
0.7
W
Tamb = 25 °C; note 3; see Fig.2
0.98
W
Tamb = 25 °C; note 4; see Fig.2
0.66
W
Tstg
storage temperature
-55
+150
°C
Tj
operating junction temperature
-55
150
°C
Notes
1. Ts is the temperature at the soldering point of the drain lead.
2. Pulse width and duty cycle limited by maximum junction temperature.
3. Device mounted on a printed-circuit board with an R th a-tp (ambient to tie-point) of 27.5 K/W.
4. Device mounted on a printed-circuit board with an R th a-tp (ambient to tie-point) of 90 K/W.


Description

P-channel enhancement mode MOS transistor BSH299 in a SOT363 SMD package


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