Purchase BSM100GB170DN2, In-stock BSM100GB170DN2 From SeekIC.
MFG:EUPEC D/C:2IGBT: 100A1700V
- Table of contents:
BSM100GB170DN2
-
Suppliers
DataSheet
General Description
BSM100GB170DN2 Maximum Ratings
|
Parameter |
Symbol |
Values |
Unit |
|
Collector-emitter voltage |
VCE |
1700 |
V |
|
Collector-gate voltage RGE = 20 k |
VCGR |
1700 | |
|
Gate-emitter voltage |
VGE |
± 20 | |
|
DC collector current TC = 25 °C TC = 80 °C |
IC |
145 100 |
A |
|
Pulsed collector current, tp = 1 ms TC = 25 °C TC = 80 °C |
lCpuls |
290 200 | |
|
Power dissipation per IGBT TC = 25 °C |
Ptot |
1000 |
W |
|
Chip temperature |
Tj |
+ 150 |
°C |
|
Storage temperature |
Tstg |
-55 ... + 150 |
°C |
BSM100GB170DN2 Features
• Half-bridge
• Including fast free-wheeling diodes
• Package with insulated metal base plate
• R G on,min = 15 Ohm
• Including fast free-wheeling diodes
• Package with insulated metal base plate
• R G on,min = 15 Ohm
BSM100GB170DN2
PDF/DataSheet Download
- Datasheet: BSM100GB170DN2
- File Size: 134096 KB
- Manufacturer: SIEMENS [Siemens Semiconductor Group]
- Click here to Download
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