BSM100GB170DN2

Packaging :
Product : IGBT Silicon Modules
Maximum Operating Temperature : + 150 C
Gate-Emitter Leakage Current : 320 nA
Configuration : Half Bridge Module
Package / Case : Half Bridge2
Collector- Emitter Voltage VCEO Max : 1700 V
Collector-Emitter Saturation Voltage : 3.4 V
Continuous Collector Current at 25 C : 145 A
Power Dissipation : 1 KW


Features:

• Half-bridge
• Including fast free-wheeling diodes
• Package with insulated metal base plate
• R _{G on,min} = 15 Ohm


Specifications

Parameter	Symbol	Values	Unit
Collector-emitter voltage	VCE	1700	V
Collector-gate voltage RGE = 20 k	VCGR	1700
Gate-emitter voltage	VGE	± 20
DC collector current TC = 25 °C TC = 80 °C	IC	145 100	A
Pulsed collector current, tp = 1 ms TC = 25 °C TC = 80 °C	lCpuls	290 200
Power dissipation per IGBT TC = 25 °C	Ptot	1000	W
Chip temperature	Tj	+ 150	°C
Storage temperature	Tstg	-55 ... + 150	°C