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MFG:EUPEC D/C:6IGBT: 10A1200V

Five Points

MFG: EUPEC

D/C: 6IGBT: 10A1200V

Parameter	Symbol	Values	Unit
Collector-emitter voltage	V_CE	1200	V
Collector-gate voltage R_GE = 20 k	V_CGR	1200
Gate-emitter voltage	V_GE	± 20
DC collector current T_C = 25 T_C = 80	I_C	15 10	A
Pulsed collector current, tp = 1 ms T_C = 25 T_C = 80	I_Cpuls	30 20	A
Power dissipation per IGBT T_C = 25	P_tot	80	W
Chip temperature	T_j	+ 150
Storage temperature	T_stg	-55 ... + 150
Thermal resistance, chip case	R_thJC	1.52	K/W
Diode thermal resistance, chip case	R_thJCD	1.52	K/W
Insulation test voltage, t= 1min.	Vis	2500	Vac
Creepage distance	-	16	mm
Clearance	-	11	mm
DIN humidity category, DIN 40 040	-	F	sec
IEC climatic category, DIN IEC 68-1	-	55 / 150 / 56	sec

• Power module
• 3-phase full-bridge
• Including fast free-wheel diodes
• Package with insulated metal base plate

BSM10GD120DN2
PDF/DataSheet Download

·BSM100GAL120DN2
SIEMENS [Siemens Semiconductor Group]
IGBT Power Module (Single switch with chopper diode Including fast free-wheeling diodes)
83162 KB
·BSM100GB120DN2
SIEMENS [Siemens Semiconductor Group]
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate)
135361 KB
·BSM100GB120DN2K
SIEMENS [Siemens Semiconductor Group]
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate)
116795 KB
·BSM100GB170DLC
IGBT Module
83313 KB
·BSM100GB170DN2
SIEMENS [Siemens Semiconductor Group]
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate)
134096 KB
·BSM100GD120DLC
EUPEC [eupec GmbH]
IGBT-Module
88027 KB
·BSM100GD120DN2
SIEMENS [Siemens Semiconductor Group]
IGBT Power Module (Solderable Power module 3-phase full-bridge Including fast free-wheel diodes)
189665 KB
·BSM100GP60
EUPEC [eupec GmbH]
Hochstzulassige Werte / Maximum rated values
217048 KB

BSM101AR
BSM100GT120DN2
BSM100GD120DN2
BSM100GB120DN2 is a type of IGBT power module which has four unique features: The first one is 3-phase full-bridge.The second one is including fast free-wheeling diodes.The third one is package with insulated metal base plate.The forth one is solerable power...
BSM100GD120DN
The BSM100GD120DN is designed as one kind of IGBT power module. Features of theit are:(1)solderable power module; (2)3-phase full-bridge; (3)including fast free-wheel diodes; (4)package with insulated metal base plate. The absolute maximum ratings of the BS...
BSM100GB170DN2
BSM100GB120DN2K

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