Purchase BSM10GD60DN2, In-stock BSM10GD60DN2 From SeekIC.
MFG:EUPEC D/C:6IGBT: 10A600V
- Table of contents:
BSM10GD60DN2
-
Suppliers
DataSheet
General Description
BSM10GD60DN2 Maximum Ratings
|
Parameter |
Symbol |
Values |
Unit |
|
Collector-emitter voltage |
VCE |
600 |
V |
|
Collector-gate voltage, RGS = 20 k |
VCGR |
600 | |
|
Gate-source voltage |
V GE |
± 20 | |
|
DC collector current TC = 25 °C TC = 80 °C |
Ic |
10
|
A |
|
Pulsed collector current, tp = 1 ms TC = 25 °C TC = 80 °C |
Ic puls |
20
| |
|
Power dissipation per IGBT TC = 25 °C |
Ptot |
35 |
W |
|
Chip temperature |
Tj |
+ 125 |
°C |
|
Storage temperature |
Tstg |
-55 ... + 150 |
BSM10GD60DN2 Features
• Power module
• 3-phase full-bridge
• Including fast free-wheel diodes
• Package with insulated metal base plate
• 3-phase full-bridge
• Including fast free-wheel diodes
• Package with insulated metal base plate
BSM10GD60DN2
PDF/DataSheet Download
- Datasheet: BSM10GD60DN2
- File Size: 125330 KB
- Manufacturer: SIEMENS [Siemens Semiconductor Group]
- Click here to Download
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