Purchase BSM150GAL120DN2, In-stock BSM150GAL120DN2 From SeekIC.
MFG:EUPEC D/C:1IGBT&1DIO: 150A1200V
- Table of contents:
BSM150GAL120DN2
-
Suppliers
DataSheet
General Description
BSM150GAL120DN2 Maximum Ratings
|
Parameter |
Symbol |
Values |
Unit |
|
Collector-emitter voltage |
VCE |
1200 |
V |
|
Collector-gate voltage RGE = 20 k |
VCGR |
1200 | |
|
Gate-emitter voltage |
VGE |
± 20 | |
|
DC collector current TC = 25 °C TC = 80 °C |
IC |
210 150 |
A |
|
Pulsed collector current, tp = 1 ms TC = 25 °C TC = 80 °C |
lCpuls |
420 300 | |
|
Power dissipation per IGBT TC = 25 °C |
Ptot |
1250 |
W |
|
Chip temperature |
Tj |
+ 150 |
°C |
|
Storage temperature |
Tstg |
-55 ... + 150 |
°C |
BSM150GAL120DN2 Features
• Single switch with chopper diode
• Including fast free-wheeling diodes
• Package with insulated metal base plate
• Including fast free-wheeling diodes
• Package with insulated metal base plate
BSM150GAL120DN2
PDF/DataSheet Download
- Datasheet: BSM150GAL120DN2
- File Size: 83163 KB
- Manufacturer: SIEMENS [Siemens Semiconductor Group]
- Click here to Download
- ·BSM100GAL120DN2
- SIEMENS [Siemens Semiconductor Group]
- IGBT Power Module (Single switch with chopper diode Including fast free-wheeling diodes)
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- SIEMENS [Siemens Semiconductor Group]
- IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate)
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- ·BSM100GB120DN2K
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- IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate)
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- ·BSM100GB170DLC
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- ·BSM100GB170DN2
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- IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate)
- 134096 KB
- ·BSM100GD120DLC
- EUPEC [eupec GmbH]
- IGBT-Module
- 88027 KB
- ·BSM100GD120DN2
- SIEMENS [Siemens Semiconductor Group]
- IGBT Power Module (Solderable Power module 3-phase full-bridge Including fast free-wheel diodes)
- 189665 KB
- ·BSM100GP60
- EUPEC [eupec GmbH]
- Hochstzulassige Werte / Maximum rated values
- 217048 KB
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