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Part Number: BSM150GAL120DN2E3166

 

 

 

 

 

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BSM150GAL120DN2E3166 Maximum Ratings

Parameter
Symbol
Values
Unit
Collector-emitter voltage
VCE
1200
V
Collector-gate voltage, RGS = 20 k
VCGR
1200
Gate-source voltage
V GE
± 20
DC collector current
TC = 25 °C
TC = 80 °C
Ic
210
150
A
Pulsed collector current, tp = 1 ms
TC = 25 °C
TC = 80 °C
Ic puls
420
300
Power dissipation, TC = 25 °C
Ptot
1250
W
Chip temperature
Tj
+ 150
°C
Storage temperature

Tstg

-55 ... + 150

BSM150GAL120DN2E3166 Features

• Single switch with chopper diode
• Including fast free-wheeling diodes
• Package with insulated metal base plate

BSM150GAL120DN2E3166 datasheet

BSM150GAL120DN2E3166
PDF/DataSheet Download

  • Datasheet: BSM150GAL120DN2E3166
  • File Size: 82413 KB
  • Manufacturer: SIEMENS [Siemens Semiconductor Group]
  • Click here to Download

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