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MFG:EUPEC  D/C:2IGBT: 150A1200V  

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BSM Series Datasheet download

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Part Number: BSM150GB120DN2

 

MFG: EUPEC

 

D/C: 2IGBT: 150A1200V

 

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BSM150GB120DN2 Maximum Ratings

Parameter
Symbol
Values
Unit
Collector-emitter voltage
VCE
1200
V
Collector-gate voltage
RGE = 20 k
VCGR
1200
Gate-emitter voltage
VGE
± 20
DC collector current
TC = 25 °C
TC = 80 °C
IC

210

150

A
Pulsed collector current, tp = 1 ms
TC = 25 °C
TC = 80 °C
lCpuls

420

300

Power dissipation per IGBT
TC = 25 °C
Ptot
1250
W
Chip temperature
Tj
+ 150
°C
Storage temperature
Tstg
-55 ... + 150
°C

BSM150GB120DN2 Features

• Half-bridge
• Including fast free-wheeling diodes
• Package with insulated metal base plate

BSM150GB120DN2 datasheet

BSM150GB120DN2
PDF/DataSheet Download

  • Datasheet: BSM150GB120DN2
  • File Size: 134446 KB
  • Manufacturer: SIEMENS [Siemens Semiconductor Group]
  • Click here to Download

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