Purchase BSM150GB120DN2E3166, In-stock BSM150GB120DN2E3166 From SeekIC.
- Table of contents:
BSM150GB120DN2E3166
-
Suppliers
DataSheet
General Description
BSM150GB120DN2E3166 Maximum Ratings
|
Parameter |
Symbol |
Values |
Unit |
|
Collector-emitter voltage |
VCE |
1200 |
V |
|
Collector-gate voltage, RGS = 20 k |
VCGR |
1200 | |
|
Gate-source voltage |
V GE |
± 20 | |
|
DC collector current TC = 25 °C TC = 80 °C |
Ic |
210
150 |
A |
|
Pulsed collector current, tp = 1 ms TC = 25 °C TC = 80 °C |
Ic puls |
420
300 | |
|
Power dissipation, TC = 25 °C |
Ptot |
1250 |
W |
|
Chip temperature |
Tj |
+ 150 |
°C |
|
Storage temperature |
Tstg |
-55 ... + 150 |
BSM150GB120DN2E3166 Features
• Half-bridge
• Including fast free-wheeling diodes
• Enlarged diode area
• Package with insulated metal base plate
• Including fast free-wheeling diodes
• Enlarged diode area
• Package with insulated metal base plate
BSM150GB120DN2E3166
PDF/DataSheet Download
- Datasheet: BSM150GB120DN2E3166
- File Size: 134080 KB
- Manufacturer: SIEMENS [Siemens Semiconductor Group]
- Click here to Download
- ·BSM100GAL120DN2
- SIEMENS [Siemens Semiconductor Group]
- IGBT Power Module (Single switch with chopper diode Including fast free-wheeling diodes)
- 83162 KB
- ·BSM100GB120DN2
- SIEMENS [Siemens Semiconductor Group]
- IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate)
- 135361 KB
- ·BSM100GB120DN2K
- SIEMENS [Siemens Semiconductor Group]
- IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate)
- 116795 KB
- ·BSM100GB170DLC
- IGBT Module
- 83313 KB
- ·BSM100GB170DN2
- SIEMENS [Siemens Semiconductor Group]
- IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate)
- 134096 KB
- ·BSM100GD120DLC
- EUPEC [eupec GmbH]
- IGBT-Module
- 88027 KB
- ·BSM100GD120DN2
- SIEMENS [Siemens Semiconductor Group]
- IGBT Power Module (Solderable Power module 3-phase full-bridge Including fast free-wheel diodes)
- 189665 KB
- ·BSM100GP60
- EUPEC [eupec GmbH]
- Hochstzulassige Werte / Maximum rated values
- 217048 KB
BSM150GB120DN2E3166 Relative Products
BSM150GB120DN2
The BSM150GB120DN2 is designed as one kind of IGBT-Module device that has some points of electrical properties:(1)collector-emitter voltage: 1200 V;(2)DC-collector current: 150 A (Tc=80 °C) or 210 A (Tc=25 °C);(3)Power dissipation per IGBT: 1250 W;(4)Chip te...
BSM150GB120DLC
Firstly,some electrical specifications about BSM150GB120DLC will be given to you.Kollektor-Emitter-Sperrspannung collector-emitter voltage(VCES) is 1200 V.Kollektor-Dauergleichstrom (TC = 80 °C IC) is nom. 150 A.DC-collector current(TC = 25 °C ,IC) is 300 A....
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