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BSM150GB170DN2

IGBT Modules 1700V 150A DUAL

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SeekIC No. : 00141755 Detail

BSM150GB170DN2: IGBT Modules 1700V 150A DUAL

BSM150GB170DN2 Data Sheet

floor Price/Ceiling Price

US $ 116.48~129.43 / Piece | Get Latest Price
Part Number:
BSM150GB170DN2
Mfg:
Infineon Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 0~6
  • 6~10
  • Unit Price
  • $129.43
  • $116.48
  • Processing time
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/4/18

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Product Details

Quick Details

Product : IGBT Silicon Modules Configuration : Dual
Collector- Emitter Voltage VCEO Max : 1700 V Collector-Emitter Saturation Voltage : 3.4 V
Continuous Collector Current at 25 C : 220 A Gate-Emitter Leakage Current : 100 nA
Power Dissipation : 1.25 KW Maximum Operating Temperature : + 150 C
Package / Case : 62MM    

Description

Packaging :
Product : IGBT Silicon Modules
Maximum Operating Temperature : + 150 C
Configuration : Dual
Power Dissipation : 1.25 KW
Package / Case : 62MM
Collector- Emitter Voltage VCEO Max : 1700 V
Gate-Emitter Leakage Current : 100 nA
Collector-Emitter Saturation Voltage : 3.4 V
Continuous Collector Current at 25 C : 220 A


Features:

• Half-bridge
• Including fast free-wheeling diodes
• Package with insulated metal base plate
• R G on,min = 10 Ohm


Specifications

Parameter
Symbol
Values
Unit
Collector-emitter voltage
VCE
1700
V
Collector-gate voltage
RGE = 20 k
VCGR
1700
Gate-emitter voltage
VGE
± 20
DC collector current
TC = 25 °C
TC = 80 °C
IC

220

150
A
Pulsed collector current, tp = 1 ms
TC = 25 °C
TC = 80 °C
lCpuls

440

300

Power dissipation per IGBT
TC = 25 °C
Ptot
1250
W
Chip temperature
Tj
+ 150
°C
Storage temperature
Tstg
-55 ... + 150
°C



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