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Part Number: BSM151F

 

MFG: SIEMENS

 

D/C: 1MOS:

 

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BSM151F Maximum Ratings

Parameter
Symbol
Values
Unit
Drain-source voltage
VDS
500
V
Drain-gate voltage, RGS = 20 k
VDGR
500
Gate-source voltage
VGS
± 20
Continuous drain current, TC = 25 °C
ID
56
A
Pulsed drain current, TC = 25 °C
ID puls
224
Operating and storage temperature range
Tj, Tstg
55 . + 150
°C
Power dissipation, TC = 25 °C
Ptot
700
W
Thermal resistance
Chip-case
Rth JC
0.18
K/W
Insulation test voltage2), t = 1 min.
Vis
2500
Vac
Creepage distance, drain-source
16
mm
Clearance, drain-source
11
DIN humidity category, DIN 40 040
F
IEC climatic category, DIN IEC 68-1
55/150/56

1) See chapter Package Outline and Circuit Diagrams. 2) Insulation test voltage between drain and base plate referred to standard climate 23/50 in acc. with DIN 50 014, IEC 146, para. 492.1.

BSM151F Features

VDS = 500 V
I D = 56 A
R DS(on) = 0.11 W
·Power module
·Single switch
·FREDFET
·N channel
·Enhancement mode
·Package with insulated metal base plate
·Package outline/Circuit diagram: 11)

BSM151F datasheet

BSM151F
PDF/DataSheet Download

  • Datasheet: BSM151F
  • File Size: 231890 KB
  • Manufacturer: SIEMENS [Siemens Semiconductor Group]
  • Click here to Download

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