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MFG:SIEMENS D/C:1MOS:
- Table of contents:
BSM191F
-
Suppliers
DataSheet
General Description
BSM191F Maximum Ratings
|
Parameter |
Symbol |
Values |
Unit |
|
Drain-source voltage |
VDS |
1000 |
V |
|
Drain-gate voltage, RGS = 20 k |
VDGR |
1000 | |
|
Gate-source voltage |
VGS |
± 20 | |
|
Continuous drain current, TC = 25 °C |
ID |
28 |
A |
|
Pulsed drain current, TC = 25 °C |
ID puls |
110 | |
|
Operating and storage temperature range |
Tj, Tstg |
55 . + 150 |
°C |
|
Power dissipation, TC = 25 °C |
Ptot |
700 |
W |
|
Thermal resistance Chip-case |
Rth JC |
0.18 |
K/W |
|
Insulation test voltage2), t = 1 min. |
Vis |
2500 |
Vac |
|
Creepage distance, drain-source |
16 |
mm | |
|
Clearance, drain-source |
11 | ||
|
DIN humidity category, DIN 40 040 |
F |
||
|
IEC climatic category, DIN IEC 68-1 |
55/150/56 |
1) See chapter Package Outline and Circuit Diagrams. 2) Insulation test voltage between drain and base plate referred to standard climate 23/50 in acc. with DIN 50 014, IEC 146, para. 492.1.
BSM191F Features
VDS = 1000 V
I D = 28 A
R DS(on) = 0.42
`Power module
`Single switch
`FREDFET
`N channel
`Enhancement mode
`Package with insulated meta`base plate
`Package outline/Circuit diagram: 1 1)
I D = 28 A
R DS(on) = 0.42
`Power module
`Single switch
`FREDFET
`N channel
`Enhancement mode
`Package with insulated meta`base plate
`Package outline/Circuit diagram: 1 1)
BSM191F
PDF/DataSheet Download
- Datasheet: BSM191F
- File Size: 210644 KB
- Manufacturer: SIEMENS [Siemens Semiconductor Group]
- Click here to Download
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