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BSM191F

Features: VDS = 1000 VI D = 28 AR DS(on) = 0.42 `Power module`Single switch`FREDFET`N channel`Enhancement mode`Package with insulated meta`base plate`Package outline/Circuit diagram: 1 1)Specifications Parameter Symbol Values Unit Drain-source voltage VDS 1000 V ...

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BSM191F: Features: VDS = 1000 VI D = 28 AR DS(on) = 0.42 `Power module`Single switch`FREDFET`N channel`Enhancement mode`Package with insulated meta`base plate`Package outline/Circuit diagram: 1 1)Specificati...

BSM191F Data Sheet

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Part Number:
BSM191F
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

VDS = 1000 V
I D = 28 A
R DS(on) = 0.42
`Power module
`Single switch
`FREDFET
`N channel
`Enhancement mode
`Package with insulated meta`base plate
`Package outline/Circuit diagram: 1 1)


Specifications

Parameter
Symbol
Values
Unit
Drain-source voltage
VDS
1000
V
Drain-gate voltage, RGS = 20 k
VDGR
1000
Gate-source voltage
VGS
± 20
Continuous drain current, TC = 25 °C
ID
28
A
Pulsed drain current, TC = 25 °C
ID puls
110
Operating and storage temperature range
Tj, Tstg
55 . + 150
°C
Power dissipation, TC = 25 °C
Ptot
700
W
Thermal resistance
Chip-case
Rth JC
0.18
K/W
Insulation test voltage2), t = 1 min.
Vis
2500
Vac
Creepage distance, drain-source
16
mm
Clearance, drain-source
11
DIN humidity category, DIN 40 040
F
IEC climatic category, DIN IEC 68-1
55/150/56

1) See chapter Package Outline and Circuit Diagrams. 2) Insulation test voltage between drain and base plate referred to standard climate 23/50 in acc. with DIN 50 014, IEC 146, para. 492.1.




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