Purchase BSM25GAL120DN2, In-stock BSM25GAL120DN2 From SeekIC.
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- Table of contents:
BSM25GAL120DN2
-
Suppliers
DataSheet
General Description
BSM25GAL120DN2 Maximum Ratings
|
Parameter |
Symbol |
Values |
Unit |
|
Collector-emitter voltage |
VCE |
1200 |
V |
|
Collector-gate voltage, RGS = 20 k |
VCGR |
1200 | |
|
Gate-source voltage |
V GE |
± 20 | |
|
DC collector current TC = 25 °C TC = 80 °C |
Ic |
38
25
|
A |
|
Pulsed collector current, tp = 1 ms TC = 25 °C TC = 80 °C |
Ic puls |
76
50 | |
|
Power dissipation,per IGBT TC = 25 °C |
Ptot |
200 |
W |
|
Chip temperature |
Tj |
+ 150 |
°C |
|
Storage temperature |
Tstg |
-55 ... + 150 |
BSM25GAL120DN2 Features
• Single switch with chopper diode
• Including fast free-wheeling diodes
• Package with insulated metal base plate
• Including fast free-wheeling diodes
• Package with insulated metal base plate
BSM25GAL120DN2
PDF/DataSheet Download
- Datasheet: BSM25GAL120DN2
- File Size: 63693 KB
- Manufacturer: SIEMENS [Siemens Semiconductor Group]
- Click here to Download
- ·BSM100GAL120DN2
- SIEMENS [Siemens Semiconductor Group]
- IGBT Power Module (Single switch with chopper diode Including fast free-wheeling diodes)
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- SIEMENS [Siemens Semiconductor Group]
- IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate)
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- ·BSM100GD120DLC
- EUPEC [eupec GmbH]
- IGBT-Module
- 88027 KB
- ·BSM100GD120DN2
- SIEMENS [Siemens Semiconductor Group]
- IGBT Power Module (Solderable Power module 3-phase full-bridge Including fast free-wheel diodes)
- 189665 KB
- ·BSM100GP60
- EUPEC [eupec GmbH]
- Hochstzulassige Werte / Maximum rated values
- 217048 KB
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