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MFG:SIEMENS D/C:04+

Five Points

MFG: SIEMENS

D/C: 04+

Parameter	Symbol	Values	Unit
Collector-emitter voltage	V_CE	1200	V
Collector-gate voltage, R_GS= 20 k	V_CGR	1200
Gate-source voltage	V _GE	± 20
DC collector current T_C= 25 °C T_C= 80 °C	I_c	50 35	A
Pulsed collector current, t_p= 1 ms T_C = 25 °C T_C = 80 °C	Ic_puls	100 70	A
Power dissipation per IGBT T_C= 25 °C	P_tot	280	W
Chip temperature	T_j	+ 150	°C
Storage temperature	T_stg	-55 ... + 150	°C

• Power module
• 3-phase full-bridge
• Including fast free-wheel diodes
• Package with insulated metal base plate

BSM35GD120D2
PDF/DataSheet Download

·BSM100GAL120DN2
SIEMENS [Siemens Semiconductor Group]
IGBT Power Module (Single switch with chopper diode Including fast free-wheeling diodes)
83162 KB
·BSM100GB120DN2
SIEMENS [Siemens Semiconductor Group]
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate)
135361 KB
·BSM100GB120DN2K
SIEMENS [Siemens Semiconductor Group]
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate)
116795 KB
·BSM100GB170DLC
IGBT Module
83313 KB
·BSM100GB170DN2
SIEMENS [Siemens Semiconductor Group]
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate)
134096 KB
·BSM100GD120DLC
EUPEC [eupec GmbH]
IGBT-Module
88027 KB
·BSM100GD120DN2
SIEMENS [Siemens Semiconductor Group]
IGBT Power Module (Solderable Power module 3-phase full-bridge Including fast free-wheel diodes)
189665 KB
·BSM100GP60
EUPEC [eupec GmbH]
Hochstzulassige Werte / Maximum rated values
217048 KB

BSM35GB120DN2
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