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MFG:EUPEC  D/C:6IGBT: 35A1200V  

BSM35GD120DN2 Product Image

BSM Series Datasheet download

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Part Number: BSM35GD120DN2

 

MFG: EUPEC

 

D/C: 6IGBT: 35A1200V

 

Urgent Purchase

BSM35GD120DN2 Maximum Ratings

Parameter Symbol
Values
 Unit
Collector-emitter voltage VCE
600
 V
Collector-gate voltage
RGE = 20 k		 VCGR
600
Gate-emitter voltage VGE
±20
DC collector current
TC = 25
TC = 80
 IC
50
35
 A
Pulsed collector current, tp =1 ms
TC = 25
TC = 80
 ICpuls
100
70
Power dissipation per IGBT
TC = 25		 Ptot
280
 W
Chip temperature Tj
+150
Storage temperature Tstg
-55 ... + 150
Thermal resistance, chip case RthJC
1.2
 K/W
Diode thermal resistance, chip case RthJCD
1.5
Insulation test voltage, t = 1min. Vis
2500
 Vac
Creepage distance -
16
 mm
Clearance -
11
DIN humidity category, DIN 40 040 -
F
 sec
IEC climatic category, DIN IEC 68-1 -
55 / 150 / 56

BSM35GD120DN2 Features

• Power module
• 3-phase full-bridge
• Including fast free-wheel diodes
• Package with insulated metal base plate

BSM35GD120DN2 datasheet

BSM35GD120DN2
PDF/DataSheet Download

Find BSM35GD120DN2 Suppliers

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