BSM400GA120D

The BSM400GA120D is designed as the IGBT power module that has four points of features:(1)low loss IGBT; (2)low inductance single switch; (3)including fast free- wheeling diodes; (4)package with insulated metal base plate.

The absolute maximum ratings of the BSM400GA120D can be summarized as:(1)collector-emitter voltage:1200 V;(2)collector-gate voltage RGE=20 k:1200 V;(3)gate-emitter voltage:±20 V;(4)DC collector current Tc=25 °C:680 A;(5)DC collector current Tc=80 °C:400 A;(6)pulsed collector current, tp=1 ms Tc=25 °C:1360 A;(7)pulsed collector current, tp=1 ms Tc=80 °C:800 A;(8)power dissipation per IGBT:2700 W;(9)chip temperature:+150°C;(10)storage temperat-ure:-40°C to + 125°C;(11)thermal resistance, chip case:</=0.045 K/W;(12)diode thermal resistance, chip case:</=0.09 K/W;(13)insulation test voltage, t=1min.:2500 Vac. If you want to know more information such as the electrical characteristics about the BSM400GA120D, please download the datasheet in www.seekic.com or www.chinaicmart.com .