Purchase BSM50GAL120DN2, In-stock BSM50GAL120DN2 From SeekIC.
MFG:SIEMENS D/C:1IGBT&1DIO: 50A1200V
- Table of contents:
BSM50GAL120DN2
-
Suppliers
DataSheet
General Description
BSM50GAL120DN2 Maximum Ratings
|
Parameter |
Symbol |
Values |
Unit |
|
Collector-emitter voltage |
VCE |
1200 |
V |
|
Collector-gate voltage RGE = 20 k |
VCGR |
1200 | |
|
Gate-emitter voltage |
VGE |
± 20 | |
|
DC collector current TC = 25 °C TC = 80 °C |
IC |
78 50 |
A |
|
Pulsed collector current, tp = 1 ms TC = 25 °C TC = 80 °C |
lCpuls |
156 100 | |
|
Power dissipation per IGBT TC = 25 °C |
Ptot |
400 |
W |
|
Chip temperature |
Tj |
+ 150 |
°C |
|
Storage temperature |
Tstg |
-55 ... + 150 |
°C |
BSM50GAL120DN2 Features
• Single switch with chopper diode
• Including fast free-wheeling diodes
• Package with insulated metal base plate
• Including fast free-wheeling diodes
• Package with insulated metal base plate
BSM50GAL120DN2
PDF/DataSheet Download
- Datasheet: BSM50GAL120DN2
- File Size: 64455 KB
- Manufacturer: SIEMENS [Siemens Semiconductor Group]
- Click here to Download
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