BSM50GB120DN2

Packaging :
Product : IGBT Silicon Modules
Maximum Operating Temperature : + 150 C
Collector- Emitter Voltage VCEO Max : 1200 V
Collector-Emitter Saturation Voltage : 2.5 V
Continuous Collector Current at 25 C : 78 A
Configuration : Half Bridge Module
Gate-Emitter Leakage Current : 200 nA
Power Dissipation : 400 W
Package / Case : Half Bridge1


Features:

• Half-bridge
• Including fast free-wheeling diodes
• Package with insulated metal base plate




Specifications

Parameter	Symbol	Values	Unit
Collector-emitter voltage	VCE	1200	V
Collector-gate voltage RGE = 20 k	VCGR	1200
Gate-emitter voltage	VGE	± 20
DC collector current TC = 25 °C TC = 80 °C	IC	78 50	A
Pulsed collector current, tp = 1 ms TC = 25 °C TC = 80 °C	ICpuls	156 100
Power dissipation per IGBT TC = 25 °C	Ptot	400	W
Chip temperature	Tj	+ 150	°C
Storage temperature	Tstg	-40 ... + 125

Description

BSM50GB120DN2 is a type of IGBT power module which has three unique features: The first one is half-bridge.The second one is including fast free-wheeling diodes.The third one is package with insulated metal base plate.

There are some maximum ratings about BSM50GB120DN2.Collector-emitter voltage(VCE) is 1200 V.Collector-gate voltage(RGE = 20 kW,VCGR) is 1200 V.Gate-emitter voltage(VGE) is ±20 V.DC collector current(IC) is 50 A(TC = 80 °C) or is 78A(TC = 25 °C).Pulsed collector current, tp = 1 ms(ICpuls) is 100A (TC = 80 °C) or is 156A(TC = 25 °C).Power dissipation per IGBT(Ptot) is 400W(TC = 25).Storage temperature(Tstg) is -55 to + 150.

In conclusion,BSM50GB120DN2 is a general introduction to this kind of product,if you are interested in it and want to know more about it, please pay more attention to our web!