BSN274 Selling Leads, Price trend, BSN274 DataSheet download, circuit diagram from SeekIC.com

Features: · Direct interface to C-MOS, TTL, etc., due to low threshold voltage· High speed switching· No secondary breakdownSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage 270 V ±VGSO gate-source voltage open...

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SeekIC No. : 004302214 Detail

BSN274: Features: · Direct interface to C-MOS, TTL, etc., due to low threshold voltage· High speed switching· No secondary breakdownSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. ...

BSN274 Data Sheet

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Part Number:: BSN274
Supply Ability:: 5000

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1~5000

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Negotiable

Processing time
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Upload time: 2024/4/25

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Recent History
What is this?

BSN20,215 evaluate
US $.05 - .05 / Piece

MOSFET N-CH TRNCH 50V 173MA
BSN20,235 evaluate
US $.04 - .04 / Piece

MOSFET TRENCH 31V-99V G2
$BSN20\E9 detail$

BSN20\E9 evaluate
MOSFET N-Channel 50V 0.18A

Product Details

Description

Features:

· Direct interface to C-MOS, TTL, etc., due to low threshold voltage
· High speed switching
· No secondary breakdown

Specifications

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
V_DS	drain-source voltage			270	V
±V_GSO	gate-source voltage	open drain		20	V
I_D	DC drain current	DC		250	mA
I_DM	peak drain current	peak		1	A
P_tot	total power dissipation	up to T_amb = 25 °C; note 1		1	W
T_stg	storage temperature		-65	150	°C
T_j	operating junction temperature			150	°C

Note:1. Device mounted on an epoxy printed-circuit board, maximum lead length 4 mm; mounting pad for the drain lead minimum 10 mm x 10 mm.

Description

Silicon n-channel enhancement mode vertical D-MOS transistor BSN274 in TO-92 variant envelope and intended for use as a line current interruptor in telephone sets and for applications in relay, high speed and line transformer drivers.

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BSN274

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