BSO301SP

Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Configuration : Single Quad Drain Triple Source
Resistance Drain-Source RDS (on) : 8 mOhms
Continuous Drain Current : 14.9 A
Package / Case : DSO


Features:

• P-Channel
• Enhancement mode
• Logic Level
• 150°C operating temperature
• Avalanche rated
• dv/dt rated
• Ideal for fast switching buck converter


Specifications

Parameter	Symbol	Values		Unit
Continuous drain current TA=25°C TA=70°C	ID	-14.9 -11.9		A
Pulsed drain current TA=25°C	I Dpulse	-59.6
Avalanche energy, single pulse ID=12.7 A , VDD=25V, RGS=25	EAS	248		mJ
Reverse diode dv/dt IS=12.7A, VDS=24V, di/dt=200A/s, Tjmax=150°C	dv/dt	-6		kV/s
Gate source voltage	VGS	±20		V
Power dissipation TA=25°C	Ptot	2.5		W
Operating and storage temperature	T j , T stg	-55 ... +150		°C
IEC climatic category, DIN IEC 68-1		55/150/56

Parameters:

Technical/Catalog Information	BSO301SP
Vendor	Infineon Technologies (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	12.6A
Rds On (Max) @ Id, Vgs	8 mOhm @ 14.9A, 10V
Input Capacitance (Ciss) @ Vds	5890pF @ 25V
Power - Max	1.79W
Packaging	Digi-Reel?
Gate Charge (Qg) @ Vgs	136nC @ 10V
Package / Case	DSO-8
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Request Inventory Verification
RoHS Status	Request Inventory Verification
Other Names	BSO301SP BSO301SP BSO301SPINDKR ND BSO301SPINDKRND BSO301SPINDKR