BSO4822

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Configuration : Single Quad Drain Triple Source
Continuous Drain Current : 12.7 A
Package / Case : DSO-8
Resistance Drain-Source RDS (on) : 14.4 m Ohms


Features:

• N-Channel
• Enhancement mode
• Logic Level
• Excellent Gate Charge x R_DS(on) product (FOM)
• 150°C operating temperature
• Avalanche rated
• dv/dt rated
• Ideal for fast switching applications


Specifications

Parameter	Symbol	Values		Unit
Continuous drain current TA=25°C TA=70°C	ID	12.7 10.2		A
Pulsed drain current TA=25°C	I Dpulse	51
Avalanche energy, single pulse ID=12.7 A , VDD=25V, RGS=25	EAS	165		mJ
Reverse diode dv/dt IS=12.7A, VDS=24V, di/dt=200A/s, Tjmax=150°C	dv/dt	6		kV/s
Gate source voltage	VGS	±25		V
Power dissipation TA=25°C	Ptot	2.5		W
Operating and storage temperature	T j , T stg	-55 ... +150		°C
IEC climatic category, DIN IEC 68-1		55/150/56

Parameters:

Technical/Catalog Information	BSO4822
Vendor	Infineon Technologies
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	12.7A
Rds On (Max) @ Id, Vgs	10 mOhm @ 12.7A, 10V
Input Capacitance (Ciss) @ Vds	1640pF @ 25V
Power - Max	2.5W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	26.2nC @ 5V
Package / Case	8-SOIC
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	BSO4822 BSO4822 BSO4822INTR ND BSO4822INTRND BSO4822INTR