BSO615CT, US $ .27-.62, BSO615CT DataSheet download, circuit diagram from SeekIC.com

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SeekIC No. : 003429925 Detail

BSO615CT: MOSFET N/P-CH 60V 3.1A/2A 8SOIC

BSO615CT Data Sheet

US $ .27~.62 / Piece | Get Latest Price

Part Number:: BSO615CT
Mfg:
Supply Ability:: 5000

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Upload time: 2024/5/19

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Recent History
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MOSFET DUAL N-CH 60V 3.1A 8-SOIC

Product Details

Quick Details

Series:	SIPMOS®	Manufacturer:	Infineon Technologies
FET Type:	N and P-Channel	FET Feature:	Logic Level Gate
Drain to Source Voltage (Vdss):	60V	Current - Continuous Drain (Id) @ 25° C:	3.1A, 2A
Rds On (Max) @ Id, Vgs:	110 mOhm @ 3.1A, 10V	Vgs(th) (Max) @ Id:	2V @ 20µA
Gate Charge (Qg) @ Vgs:	22.5nC @ 10V	Input Capacitance (Ciss) @ Vds:	380pF @ 25V
Power Dissipation :	21 W	Power - Max:	2W
Mounting Type:	Surface Mount	Package / Case:	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:	PG-DSO-8

Description

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Mounting Type: Surface Mount
Packaging: Cut Tape (CT)Alternate Packaging
Drain to Source Voltage (Vdss): 60V
Power - Max: 2W
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Manufacturer: Infineon Technologies
Supplier Device Package: PG-DSO-8
Series: SIPMOS®
Current - Continuous Drain (Id) @ 25° C: 3.1A, 2A
Rds On (Max) @ Id, Vgs: 110 mOhm @ 3.1A, 10V
Vgs(th) (Max) @ Id: 2V @ 20µA
Gate Charge (Qg) @ Vgs: 22.5nC @ 10V
Input Capacitance (Ciss) @ Vds: 380pF @ 25V

Parameters:

Technical/Catalog Information	BSO615CT
Vendor	Infineon Technologies (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N and P-Channel
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25° C	3.1A, 2A
Rds On (Max) @ Id, Vgs	*
Input Capacitance (Ciss) @ Vds	380pF @ 25V
Power - Max	2W
Packaging	Digi-Reel?
Gate Charge (Qg) @ Vgs	22.5nC @ 10V
Package / Case	*
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	BSO615CT BSO615CT BSO615CXTINDKR ND BSO615CXTINDKRND BSO615CXTINDKR

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BSO615CT

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