BSO615N

FET Feature: Logic Level Gate
Mounting Type: Surface Mount
FET Type: 2 N-Channel (Dual)
Drain to Source Voltage (Vdss): 60V
Power - Max: 2W
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Gate Charge (Qg) @ Vgs: 20nC @ 10V
Current - Continuous Drain (Id) @ 25° C: 2.6A
Packaging: Cut Tape (CT)
Manufacturer: Infineon Technologies
Supplier Device Package: PG-DSO-8
Series: SIPMOS®
Vgs(th) (Max) @ Id: 2V @ 20µA
Input Capacitance (Ciss) @ Vds: 380pF @ 25V
Rds On (Max) @ Id, Vgs: 150 mOhm @ 2.6A, 4.5V


Features:

· Dual N Channel
· Enhancement mode
· Avalanche rated
· Logic Level
· dv/dt rated


Specifications

Parameter	Symbol	Values	Unit
Continuous drain current TA = 25 °C TA = 70 °C	LD	2.6	A
Pulsed drain current, one channel active TA = 25 °C	L Dpulse	10.4	A
Avalanche energy, single pulse ID = 3.1 A , VDD = 25 V, RGS = 25 ID = -2 A , VDD = -25 V, RGS = 25	EAS	60	mJ
Avalanche current,periodic limited by Tjmax	IAR	2.6	A
Avalanche energy, periodic limited by T jmax	E AR	0.18	mJ
Reverse diode dv/dt IS = 3.1 A, VDS = 48 V, di/dt = 200 A/s, IS = -2 A, VDS = -48 T jmax = 150 °C	dv/dt	6	kV/s
Gate source voltage	VGS	±20	V
Power dissipation, one channel active TA = 25 °C	Ptot	2	W
Operating temperature	T j , T stg	-55 ... +150	°C
IEC climatic category, DIN IEC 68-1		55/150/56	°C