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Five Points

Parameter	Symbol	Values	Unit
Continuous drain current, one channel active	L_D	3.1	A
Pulsed drain current, one channel active T_A= 25 °C	L_Dpulse	12.4	A
Avalanche energy, single pulse I_D = 3.1 A, V_DD = 25 V, R_GS = 25	E_AS	60	mJ
Avalanche current,periodic limited by T _jmax	LAR	3.1	A
Avalanche energy, periodic limited by T _jmax	E _AR	0.2	mJ
Reverse diode dv/dt I_S = 3.1 A, V_DS = 20 V, di/dt = 200 A/s, T _jmax = 150 °C	dv/dt	6	kV/s
Gate source voltage	V_GS	±20	V
Power dissipation, one channel active T_A= 25 °C	P_tot	2	W
Operating temperature	T_J	-55 ... +150	°C
Storage temperature	T_stg	-55 ... +150	°C
IEC climatic category, DIN IEC 68-1		55/150/56	°C

· Dual N Channel
· Enhancement mode
· Avalanche rated
· dv/dt rated

BSO052N03S
PDF/DataSheet Download

BSO 615 C
BSN304A
N-channel enhancement mode vertical D-MOS transistor BSN304A in a TO-92 variant envelope, intended for use as a line current interruptor in telephone sets and for applications in relay, high-speed and line transformer drivers.
BSN304,126
MOSFET N-CH 300V 300MA SOT54
BSN304
N-channel enhancement mode vertical D-MOS transistor BSN304in a TO-92 variant envelope, intended for use as a line current interruptor in telephone sets and for applications in relay, high-speed and line transformer drivers.
BSN274A
Silicon n-channel enhancement mode vertical D-MOS transistor BSN274Ain TO-92 variant envelope and intended for use as a line current interruptor in telephone sets and for applications in relay, high speed and line transformer drivers.
BSN274
Silicon n-channel enhancement mode vertical D-MOS transistor BSN274 in TO-92 variant envelope and intended for use as a line current interruptor in telephone sets and for applications in relay, high speed and line transformer drivers.

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