MFG:PHILIPS Package Cooled:SOT223 D/C:09+
MFG: PHILIPS
Package Cooled: SOT223
D/C: 09+
Description: N-channel enhancement mode vertical D-MOS transistor in a miniature SOT223 envelope and designed for u...
N-channel enhancement mode vertical D-MOS transistor in a miniature SOT223 envelope and designed for use in telephone ringer circuits and for application in relay, high-speed and line transformer drivers.
Drain-source voltage .........................VDS max. 80V
Drain-source voltage
(non-repetitive peak; tp £ 2 ms) ................VDS(SM) max. 100 V
Gate-source voltage (open drain) .................±VGSO max. 20 V
Drain current (DC).......................... ID max. 325 mA
Drain current (peak)........................ IDM max. 650mA
Total power dissipation up to Tamb = 25 °C (note 1) ........Ptot max. 1.5 W
Storage temperature range ...................Tstg -65 to + 150 °C
Junction temperature .........................Tj max. 150 °C
Note:1. Device mounted on an epoxy printed-circuit board 40 mm X 40 mm X 1.5 mm; mounting pad for the drain lead min. 6 cm2.
BSP110
PDF/DataSheet Download
N-channel enhancement mode vertical D-MOS transistor BSP108 in a miniature SOT223 envelope and intended for use in relay, high-speed and line-transformer drivers.
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SOT223-1.jpg)
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