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BSP110

Features: · Direct interface to C-MOS, TTL, etc.· High-speed switching· No secondary breakdownPinoutSpecificationsDrain-source voltage .........................VDS max. 80VDrain-source voltage(non-repetitive peak; tp £ 2 ms) ................VDS(SM) max. 100 VGate-source voltage (open drain)...

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SeekIC No. : 004302281 Detail

BSP110: Features: · Direct interface to C-MOS, TTL, etc.· High-speed switching· No secondary breakdownPinoutSpecificationsDrain-source voltage .........................VDS max. 80VDrain-source voltage(non-r...

BSP110 Data Sheet

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Part Number:
BSP110
Supply Ability:
5000

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Total Cost: $ 0.00

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Product Details

Description



Features:

· Direct interface to C-MOS, TTL, etc.
· High-speed switching
· No secondary breakdown


Pinout

Connection Diagram


Specifications

Drain-source voltage .........................VDS max.      80V
Drain-source voltage
(non-repetitive peak; tp £ 2 ms) ................VDS(SM) max.      100 V
Gate-source voltage (open drain) .................±VGSO max.    20 V
Drain current (DC).......................... ID max.     325 mA
Drain current (peak)........................ IDM max.      650mA
Total power dissipation up to Tamb = 25 °C (note 1) ........Ptot max.    1.5 W
Storage temperature range ...................Tstg   -65 to + 150 °C
Junction temperature .........................Tj max.    150 °C
Note:1. Device mounted on an epoxy printed-circuit board 40 mm X 40 mm X 1.5 mm; mounting pad for the drain lead min. 6 cm2.




Description

N-channel enhancement mode vertical D-MOS transistor BSP110 in a miniature SOT223 envelope and designed for use in telephone ringer circuits and for application in relay, high-speed and line transformer drivers.




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