MFG:NXP Semiconductors Category:Discrete Semiconductor Products
SOT223-1.jpg)
Category: Discrete Semiconductor Products
MFG: NXP Semiconductors
Descriptions: MOSFET N-CH 200V 0.55A SOT223
5000
.28050
1402.50
| Technical/Catalog Information | BSP122,115 |
| Vendor | NXP Semiconductors |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 200V |
| Current - Continuous Drain (Id) @ 25° C | 550mA |
| Rds On (Max) @ Id, Vgs | 2.5 Ohm @ 750mA, 10V |
| Input Capacitance (Ciss) @ Vds | 100pF @ 25V |
| Power - Max | 1.5W |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | - |
| Package / Case | SOT-223, SC-73, TO-261 (3 Leads + Tab) |
| FET Feature | Standard |
| Drawing Number | 568; SOT223; ; |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | BSP122,115 BSP122,115 |
BSP030
PDF/DataSheet Download
N-channel enhancement mode vertical D-MOS transistor BSP122in a SOT223 envelope and intended for use as a line current interruptor in telephone sets and for applications in relay, high-speed and line transformer drivers.
N-channel enhancement mode vertical D-MOS transistor BSP121 in aminiature SOT223 envelope and designed for use as a line current interrupter in telephone sets and for application in relay, high-speed and line-transformer drivers.
N-channel enhancement mode vertical D-MOS transistor BSP120 in a miniature SOT223 envelope and designed for use as a line current interrupter in telephone sets and for application in relay, high-speed and line-transformer drivers.
SOT223-1.jpg)
MOSFET N-CH 100V 520MA SOT223
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