BSP149

The BSP149 is designed as the small-signal-transistor with three points of features:(1)dv /dt rated;(2)depletion mode;(3)N-channel. The absolute maximum ratings of the BSP149 can be summarized as:(1)continuous drain current Ta=25 °C:0.66 A;(2)continuous drain current Ta=70 °C:0.53 A;(3)pulsed drain current:2.6 A;(4)reverse diode dv /dt:6 kV/s;(5)gate source voltage:±20 V;(6)ESD sensitivity (HBM) as per MIL-STD 883:class 1;(7)power dissipation:1.8 W;(8)operating and storage temperature:-55 to 150 °C;(9)IEC climatic category; DIN IEC 68-1:55/150/56;(10)thermal resistance, junction - soldering point:25 K/W.

The electrical characteristics of the BSP149 can be summarized as:(1)drain-source breakdown voltage:200 V;(2)gate threshold voltage:-2.1 to -1 V;(3)gate-source leakage current:10 nA;(4)saturated drain current:140 mA;(5)drain-source on-state resistance (VGS=0 V, ID=70 mA):1.7 ;(6)drain-source on-state resistance (VGS=10 V,ID=660 mA):1.0 ;(7)transconductance:0.8 S. If you want to know more information such as the electrical characteristics about the BSP149, please download the datasheet in www.seekic.com or www.chinaicmart.com .