BSP152 Selling Leads, Price trend, BSP152 DataSheet download, circuit diagram from SeekIC.com

Features: · Direct interface to C-MOS, TTL, etc.· High-speed switching· No secondary breakdown.Specifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage 200 V ±VGSO gate-source voltage open drain 40 V ID...

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SeekIC No. : 004302297 Detail

BSP152: Features: · Direct interface to C-MOS, TTL, etc.· High-speed switching· No secondary breakdown.Specifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-sourc...

BSP152 Data Sheet

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Part Number:: BSP152
Supply Ability:: 5000

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1~5000

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Negotiable

Processing time
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Product Details

Description

Features:

· Direct interface to C-MOS, TTL, etc.
· High-speed switching
· No secondary breakdown.

Specifications

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
V_DS	drain-source voltage			200	V
±V_GSO	gate-source voltage	open drain		40	V
I_D	DC drain current			550	mA
I_DM	peak drain current			3	A
P_tot	total power dissipation	up to Tamb = 25 °C; note 1		1.5	W
T_stg	storage temperature		-65	+150	°C
T_j	operating junction temperature			150	°C

Note
1. Device mounted on an epoxy printed-circuit board, 40 x 40 x 1.5 mm, mounting pad for the drain tab minimum 6 mm².

Description

N-channel enhancement mode vertical D-MOS transistor BSP152 in a SOT223 envelope, intended for use as a line current interruptor in telephone sets and for applications in relay, high-speed and line transformer drivers.

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BSP152

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