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Five Points

Parameter	Symbol	Value	Unit
Continuous drain current T_A=25° C T_A=70°C	I_D	1.1 0.88	A
Pulsed drain current T_A=25°C	I_{D puls}	4.4	A
Reverse diode dv/dt I_S=-0.26A, V_DS=-200V, di/dt=-200A/s, T_jmax=150°C	dv/dt	6	kV/s
Gate source voltage	V_GS	± 20	V
ESD Sensitivity (HBM) as per MIL-STD 883		Class 1
Power dissipation T_A=25°C	P_tot	1.8	V
Operating and storage temperature	T_j, T_stg	-55... +150	W
IEC climatic category; DIN IEC 68-1		55/150/00	°C

• N-Channel
• Enhancement mode
• Logic Level
• dv/dt rated

BSP296
PDF/DataSheet Download

BSP295E6327T
MOSFET N-CH 60V 1.8A SOT223
BSP295E6327
MOSFET N-CH 60V 1.8A SOT223
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·P-channel enhancement mode vertical D-MOS transistor BSP255 in a 4-pin plastic SOT223 SMD package.
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P-channel vertical D-MOS transistor BSP254A in a TO-92 variant envelope and intended for use as a line current interruptor in relay, high-speed and line transformer drivers.
BSP254
P-channel vertical D-MOS transistor BSP254 in a TO-92 variant envelope and intended for use as a line current interruptor in relay, high-speed and line transformer drivers.

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