BSP50

Power Dissipation :
Transistor Polarity : NPN
Mounting Style : SMD/SMT
Packaging : Reel
Configuration : Single
Emitter- Base Voltage VEBO : 5 V
Maximum Operating Temperature : + 150 C
Package / Case : SOT-223
Collector- Base Voltage VCBO : 60 V
Maximum DC Collector Current : 0.8 A
Maximum Collector Cut-off Current : 0.05 uA
Collector- Emitter Voltage VCEO Max : 45 V


Features:

· High collector current
· Low collector-emitter saturation voltage
· Complementary types: BSP60 ... BSP62 (PNP)


Specifications

Parameter	Symbol	Values			Unit
		BSP 50	BSP 51	BSP 52
Collector-emitter voltage	VCER	45	60	80	V
Collector-base voltage	VCB0	60	80	90
Emitter-base voltage	VEB0	5	5	5
Collector current	IC	1			A
Peak collector current	ICM	2
Base current	IB	100
Total power dissipation, TS = 124 °C	Ptot	1.5			W
Junction temperature	Tj	150			°C
Storage temperature range	Tstg	65 . + 150
Thermal Resistance
Junction - ambient1)	R th JA	72			K/W

¹ For calculation of R _thJA please refer to Application Note Thermal Resistance


Parameters:

Technical/Catalog Information	BSP50
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	NPN - Darlington
Voltage - Collector Emitter Breakdown (Max)	45V
Current - Collector (Ic) (Max)	800mA
Power - Max	1W
DC Current Gain (hFE) (Min) @ Ic, Vce	1000 @ 150mA, 10V
Vce Saturation (Max) @ Ib, Ic	1.3V @ 500A, 500mA
Frequency - Transition	-
Current - Collector Cutoff (Max)	50nA
Mounting Type	Surface Mount
Package / Case	SOT-223, SC-73, TO-261 (3 Leads + Tab)
Packaging	Tape & Reel (TR)
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	BSP50 BSP50