BSP613P

Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
FET Type: MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss): 60V
Power - Max: 1.8W
Packaging: Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25° C: 2.9A
Package / Case: TO-261-4, TO-261AA
Gate Charge (Qg) @ Vgs: 33nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Series: SIPMOS®
Manufacturer: Infineon Technologies
Supplier Device Package: PG-SOT223-4
Input Capacitance (Ciss) @ Vds: 875pF @ 25V
Rds On (Max) @ Id, Vgs: 130 mOhm @ 2.9A, 10V


Features:

· P-Channel
· Enhancement mode
· Avalanche rated
· dv/dt rated
· Ideal for fast switching buck converter


Specifications

Parameter	Symbol	Value	Unit
Continuous drain current TA=25°C TA=70°C	ID	-2.9 -2.3	A
Pulsed drain current TA=25°C	I D puls	-11.6
Avalanche energy, single pulse ID=2.9 A , VDD=-25V, RGS=25W	EAS	150	mJ
Avalanche energy, periodic limited by Tjmax	EAR	0.18	mJ
Reverse diode dv/dt IS=-0.26A, VDS=-200V, di/dt=-200A/s, Tjmax=150°C	dv/dt	6	kV/s
Gate source voltage	V GS	± 20
Power dissipation TA=25°C	Ptot	1.8	V
Operating and storage temperature	Tj , Tstg	-55... +150	W
IEC climatic category; DIN IEC 68-1		55/150/00	°C

Parameters:

Technical/Catalog Information	BSP613P
Vendor	Infineon Technologies
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25° C	2.9A
Rds On (Max) @ Id, Vgs	130 mOhm @ 2.9A, 10V
Input Capacitance (Ciss) @ Vds	875pF @ 25V
Power - Max	1.8W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	33nC @ 10V
Package / Case	SOT-223, SC-73, TO-261 (3 Leads + Tab)
FET Feature	Logic Level Gate
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	BSP613P BSP613P